| 摘要 |
FIELD: physics, semiconductors. ^ SUBSTANCE: invention is related to methods for creation of metal nanowires on surface of semiconductor substrates and may be used in creation of solid-state electronic instruments. Substance of invention: in method for creation of conducting nanowires on surface of semiconductor substrates, copper is deposited on surface of silicon Si(lll) with formation of buffer layer of copper silicide Cu2Si at the temperature of 500C under conditions of ultrahigh vacuum. Buffer layer of copper silicide is formed with monatomic thickness, afterwards at temperature of 20C at least 10 layers of copper are deposited on atomic steps of buffer layer surface, which form nanowires of epitaxial copper that are oriented along atomic steps of substrate. ^ EFFECT: provides for creation of nanowires that possess high conductivity, with the possibility of these nanowires formation location control. ^ 3 dwg |
