Organic transistor i.e. organic FET, has nano-scale objects parallely aligned to axis connecting source and drain electrodes in organic matrix, where nano-scale objects have length lower than distance separating electrodes

摘要

The transistor has a channel provided with wire shaped nano-scale objects (4) e.g. nano-wire or carbon nano-tube, that are parallely aligned to an axis connecting source and drain electrodes (1) in an semi-conductor type organic matrix (3). The electrodes are formed on a substrate (2) e.g. glass substrate. The nano-scale objects have length lower than a distance separating the electrodes, where the nano-wire is made up of silicon, germanium, zinc oxide or combination of materials. Alignment of the objects is achieved by applying electric field between the electrodes. An independent claim is also included for a method for realizing an organic transistor.