| 摘要 |
Six rows of melting regions (131, 132) to be cut starting points are formed inside a silicon wafer (11) along a cut-planned line (5). At the time of forming the melting region (131) closest to the rear surface (21) of a processing object (1), a weakened region (18) is formed on the rear surface (21) along the cut-planned line (5). Since the melting regions (131, 132) are formed inside the silicon wafer (11), particles are prevented from being generated from the melting regions (131, 132). Furthermore, since the weakened region (18) having a prescribed depth is formed on the surface (21) of the processing object (1) along the cut-planned line (5), the processing object (1) can be cut along the cut-planned line (5) with a relatively small external force. |
