PRODUCTION PROCESS OF SEMICONDUCTOR LASER ELEMENT, AND PRODUCTION PROCESS OF SEMICONDUCTOR LASER DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor laser element that improves heat dissipation (temperature characteristic) while restraining unstable light confinement. SOLUTION: The method of manufacturing the semiconductor laser element 10 includes a step of forming a cap layer 126 with a protrusion 126e on a ridge 127 to cover an upper side of a current block layer 125 and the ridge 127, a step of forming a mask layer 15 on the cap layer 126 to reduce the thickness of a portion 15a disposed on an upper surface 126b of the protrusion 126e than the thickness of a portion 15b disposed on an upper surface 126d except the protrusion 126e, a step of removing the portion 15b of the mask layer 15 to the depth in the middle and for exposing the upper surface 126b of the protrusion 126e by removing the portion 15a of the mask layer 15 and a step of removing a region 126a of the cap layer 126 by a prescribed thickness by using the portion 15b of the mask layer 15 as a mask. COPYRIGHT: (C)2009,JPO&INPIT