| 摘要 |
<P>PROBLEM TO BE SOLVED: To reliably perform threshold correction as desired by reducing source voltage fluctuation of drive transistors caused by parasitic capacitance coupling when the voltage of the power to be supplied to the drive transistors is changed. <P>SOLUTION: In the wiring layout of pixels 20, a power supply line 32 is formed to avoid a semiconductor layer 83 forming source/drain areas 82 of the drive transistors 22 provided for each row of pixel rows along the row direction, so that the source/drain parasitic capacitance Cds of the drive transistors 22 can be reduced, which is formed at a position where the wiring patterns of the semiconductor layer 83 and the power supply line 32 are overlapped, thereby reducing the fluctuation of source voltage Vs of the drive transistors 22 caused by the coupling through the parasitic capacitance Cds. <P>COPYRIGHT: (C)2009,JPO&INPIT |
