SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device having a p-type MISFET or an n-type MISEFET and its manufacturing method, capable of reducing source-drain electrode interface resistance of the p-type MISFET or the n-type MISEFET. SOLUTION: The semiconductor device includes the p-type MISFET 200 on a semiconductor substrate 100. The p-type MISFET 200 includes a channel region 204 in the semiconductor substrate 100, a gate insulating film 206 formed on the channel region 204, a gate electrode 208 formed on the gate insulating film 206, source-drain electrodes which are silicide layers 210 containing Ni on both sides of the channel region 204, and interface layers 230 formed on a semiconductor substrate 100 side of an interface of the source-drain electrode and the semiconductor substrate 100, and containing Mg, Ca, or Ba. COPYRIGHT: (C)2009,JPO&INPIT