FILM FORMATION METHOD, FILM-FORMING APPARATUS, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a film formation method and a film-forming apparatus capable of efficiently removing an organic solvent constituent in source gas and suppressing the decomposition of an organic metal compound included in the source gas. SOLUTION: The film formation method includes: a process for generating the source gas by vaporizing a solution where the metal organic compound is dissolved into an organic medium; and a process for introducing the source gas into a reaction chamber 10 with a substrate 1 placed therein. Before the source gas reaches the substrate 1, a catalyst including a noble metal is brought into contact with the source gas and oxygen gas, the organic solvent is decomposed, and a film 2 including metal is formed on the substrate 1. COPYRIGHT: (C)2009,JPO&INPIT