| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, in particular a nitride semiconductor device which is used in the manufacture of laser diodes, wherein peeling-off of the electrode is suppressed while suppressing the complexity of processes and a reduction in yield. SOLUTION: The nitride semiconductor device includes a P-type nitride semiconductor layer 1 with a ridge 2 on its surface, an SiO<SB>2</SB>film 3 covering at least the side face of the ridge 2, an adherence layer 4 which is formed on a surface of the SiO<SB>2</SB>film 3 and consists mainly of silicon, and a P-type electrode 5 formed on the upper surface of the ridge 2 and on a surface of the adherence layer 4. COPYRIGHT: (C)2009,JPO&INPIT
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