发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 The present invention is directed to reduce the chip area of a semiconductor integrated circuit. A semiconductor integrated circuit of the invention includes a first transistor, a second transistor disposed adjacent to the first transistor along a Y axis, and a third transistor disposed adjacent to the second transistor along an X axis. The semiconductor integrated circuit further includes a fourth transistor disposed adjacent to the third transistor along the Y axis and disposed adjacent to the first transistor along the X axis. The first to fourth transistors share a well, and an output signal of the first transistor and an output signal of the second transistor have phases opposite to each other. An output signal of the second transistor and an output signal of the third transistor have phases opposite to each other. An output of the third transistor and an output signal of the fourth transistor have phases opposite to each other. The outputs of the transistors act so as to cancel out fluctuations in well potential.
申请公布号 US2009146693(A1) 申请公布日期 2009.06.11
申请号 US20080331051 申请日期 2008.12.09
申请人 RENESAS TECHNOLOGY CORP. 发明人 ISODA MASANORI
分类号 H03K19/0948;H01L27/092;H03K3/03 主分类号 H03K19/0948
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