| 摘要 |
According to one embodiment of the present invention, a method of manufacturing an integrated circuit including a plurality of memory cells is provided, including: forming a first isolation layer including a plurality of contact elements, each contact element extending from the top surface of the first isolation layer to the bottom surface of the first isolation layer; forming a second isolation layer on the first isolation layer, wherein the material of the first isolation layer is different from the material of the second isolation layer; forming trenches within the second isolation layer above the contact elements, wherein the trenches are formed using an etching substance which selectively etches the material of the second isolation layer over the material of the first isolation layer; and filling the trenches with resistivity changing material.
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