| 摘要 |
A plasma process apparatus and a processing method thereof are provided to improve cleaning efficiency by generating the plasma uniformly inside a process chamber by supplying the power to an upper electrode and an auxiliary electrode at the same time. A process chamber(110) includes an electrostatic chuck(116) with a bottom electrode(112). A substrate is received in the bottom of the process chamber. The process chamber has a larger space in an upper part than in the lower part and receives the cleaning gas. A top electrode(114) is arranged in the upper part of the process chamber and generates the plasma inside the process chamber by receiving the high frequency power. An auxiliary electrode(120) is arranged between an edge side of the top electrode and an upper edge of the process chamber. The auxiliary electrode receives the DC and generates the plasma in the upper edge of the process chamber.
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