| 摘要 |
<P>PROBLEM TO BE SOLVED: To greatly reduce current consumption of a piezoelectric thin film element, and improve reliability and durability thereof, and to improve voltage resistance properties in the piezoelectric thin film element. <P>SOLUTION: A piezoelectric thin film element includes a lower electrode layer 2, a piezoelectric thin film layer 4 and an upper electrode layer 3 on a substrate 1 and the piezoelectric thin film layer 4 is constituted of a crystal in a perovskite structure with (Na<SB>x</SB>K<SB>y</SB>Li<SB>z</SB>)NbO<SB>3</SB>(0<x<1, 0<y<1, 0≤z≤0.1, x+y+z=1) as a main phase. Between the lower electrode layer 2 and the upper electrode layer 3, such a current block layer 5 as to let an electroresistance value become ≥2.5×10<SP>5</SP>Ω, the electroresistance value being converted per electrode area 1 cm<SP>2</SP>between electrodes when an electric field of ≤20 kV/cm is applied at normal temperature between the lower electrode layer 2 and the upper electrode layer 3. <P>COPYRIGHT: (C)2009,JPO&INPIT |
