ROUGHING METHOD OF SEMICONDUCTOR LIGHT-EMITTING ELEMENT WAFER AND SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

PROBLEM TO BE SOLVED: To solve the problem that it is difficult to easily form a total reflection prevention rough face on a surface of a semiconductor light emitting device.

SOLUTION: A resist film is formed on a main face 9 of a semiconductor wafer 1 for forming the semiconductor light emitting device, and a recess is formed in the resist film with a mold. A first recess 17 arranged at a first average pitch P1 is formed in the semiconductor wafer 1 by dry-etching the resist film having the recess as a mask. A mask forming metal film formed of Ag is formed in the main face 9 of the semiconductor wafer 1 having the first recess 17. Heat treatment is performed on the mask forming metal film and aggregation is caused. The semiconductor wafer 1 is dry-etched with a granular material formed of Ag, which is caused by aggregation, as the mask. A plurality of second recesses 22 arranged at second average pitches P2 are formed on the main face 9 of the semiconductor wafer 1.

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