| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a ZnO-based semiconductor device capable of growing a flat ZnO-based semiconductor layer on an MgZnO substrate whose principal surface of lamination side has a C-surface. <P>SOLUTION: An MgxZn1-xO (0≤x<1) substrate, whose main surface has the C-surface, is employed and ZnO-based semiconductor layers 2-5 are grown through epitaxial growth on the principal surface, formed so that an angle Φm, formed by an axis of projection of the normal line of the principal surface against the plane formed between m-axis and c-axis of the substrate crystalline axis, and the C-axis becomes 0<Φm≤3. In this case, a p-electrode 8 is formed on the ZnO-based semiconductor layer 5 and an n-electrode 9 is formed on the lower side of the MgxZn1-xO substrate 1. A regular step which is arrayed in the direction of m-axis is formed on the surface of the MgxZn1-xO substrate 1 in such a manner where a phenomenon, called as step bunching, can be prevented and the flatness of the film of semiconductor layer laminated on the substrate 1 can be improved. <P>COPYRIGHT: (C)2009,JPO&INPIT |
