PLASMA ETCHING METHOD AND STORAGE MEDIUM

摘要

PROBLEM TO BE SOLVED: To provide a plasma etching method capable of increasing a selection rate of a stop layer to an interlayer dielectric.

SOLUTION: A manufacturing process of a semiconductor device is applied to a wafer W provided with a low dielectric constant interlayer dielectric 41 consisting of CwFx(x and w are each a predetermined natural number) and a stop layer 42, and the stop layer 42 is exposed on the bottom of a via hole 46 formed on the low dielectric constant interlayer dielectric 41. The manufacturing process has a step of exposing the low dielectric constant interlayer dielectric 41 and the stop layer 42 to the plasma generated from a CF4gas and a CH2F2gas and etching the stop layer 42.

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