| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of preventing short circuit to adjacent wiring via an air gap caused by a bottom borderless via, while reducing inter-wiring parasitic capacitance by the air gap. SOLUTION: The semiconductor device includes: at least a pair of first metal wiring arranged at prescribed interval on a first insulating film; an inter-wiring insulating film for covering the first metal wiring; second metal wiring to intersect with the first metal wiring on the inter-wiring insulating film; and a plug to be connected to one or both of the pair of first metal wiring and the second metal wiring. The inter-wiring insulating film includes, between the pair of first metal wiring, an area including the air gap, and an area composed of only the inter-wiring insulating film. The area composed of only the inter-wiring insulating film is positioned between the pair of first metal wiring corresponding to a part to be connected to the plug. COPYRIGHT: (C)2009,JPO&INPIT
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