| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a circuit device, which can suppress the concentration of carriers and can prevent destruction by malfunction caused by a parasitic transistor. SOLUTION: A semiconductor device 10 includes a first semiconductor region 4, second semiconductor regions 5 and 6, a third semiconductor region 7, a fourth semiconductor region 8, a first electrode 20, a control electrode 22, and a second electrode 21. The second semiconductor regions 5 and 6 have a first layer 5 and a second layer 6. When the specific resistanceρNd of the second layer 6 is≥27Ωcm and <70Ωcm, the specific resistanceρN of the first layer 5 is set within the range of 8.66×exp(-0.0536×(ρNd))Ωcm<ρN≤2Ωcm. When the specific resistanceρNd of the second layer 6 is≥70Ωcm and≤160Ωcm, the specific resistanceρN of the first layer 5 is set within the range of 0.2Ωcm<ρN≤2Ωcm. A circuit device includes the semiconductor device 10, a coil 102, and a Zener diode 106. COPYRIGHT: (C)2009,JPO&INPIT
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