| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of sufficiently preventing leakage current caused by an inter-electrode insulating film. SOLUTION: The semiconductor device has a tunnel insulating film 13 formed on a semiconductor substrate 11, a floating gate electrode 14 formed on the tunnel insulating film, an inter-electrode insulating film 15 formed on the floating gate electrode, and a control gate electrode 16 formed on the inter-electrode insulating film. The inter-electrode insulating film includes a main insulating film and a plurality of fine particles existing in the main insulating film. COPYRIGHT: (C)2009,JPO&INPIT
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