ORGANIC METAL RAW MATERIAL, FILM-FORMING APPARATUS, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a film formation method capable of improving film quality by reducing the number of particles in the film formed by vapor phase growth method by using an organic metal compound for a raw material. SOLUTION: The film formation method includes: a process for vaporizing at least one organic metal raw material consisting of solution where the organic metal compound is dissolved to an organic solvent having a moisture content of not more than 1.0 mass% and preferably not more than 0.8 mass%; and a process for forming a film including metal on a substrate by performing vapor phase growth of the vaporized organic metal raw material. Thus the generation of particles can be suppressed. COPYRIGHT: (C)2009,JPO&INPIT