| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a metal ruthenium-containing thin film by a chemical vapor deposition process free from the intrusion of ruthenium oxide. SOLUTION: The organic Ru complex havingβ-diketonato and diene expressed by general formula (1) (wherein, X and Y denote a normal or branched 1-6C alkyl group; Z denotes a hydrogen atom or a 1-4C alkyl group; and L denotes any of 1,4-hexadiene, 1,3-hexadiene, 2,4-hexadiene, 3-methyl-1,3-pentadiene or 2-methyl-1,4-pentadiene) as ligands, or the solvent solution thereof is used as a feed source. COPYRIGHT: (C)2009,JPO&INPIT
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