发明名称 METHOD AND APPARATUS FOR MANUFACTURING POLYCRYSTAL SILICON
摘要 PROBLEM TO BE SOLVED: To realize cost reduction by enabling manufacturing of high-quality silicon rods, even in peripheral parts of a reactor, using a power source with specifications same as those used for other silicon core rods. SOLUTION: A manufacturing method of a polycrystal silicon includes steps of: individually installing vertically-extending silicon core rods 4 in a standing manner on a plurality of electrodes 5 arranged on inner bottom of a reactor 1; feeding a raw material gas to the reactor 1; and applying electricity to the silicon core rods 4 through the electrodes 5 so that the silicon core rods 4 generate heat to induce deposition of polycrystal silicon derived from the raw material gas on their surfaces. Among the plurality of silicon core rods 4, short-length silicon core rods 4 are installed in a standing manner on the electrodes 5 located near the periphery of the reactor 1, and the rest of the silicon core rods 4 are installed in a standing manner on other electrodes 5 when depositing the polycrystal silicon. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009126773(A) 申请公布日期 2009.06.11
申请号 JP20070307443 申请日期 2007.11.28
申请人 MITSUBISHI MATERIALS CORP 发明人 ENDO TOSHIHIDE;TAKE MASAYUKI;ISHII TOSHIYUKI;SAKAGUCHI MASAAKI;HATAKEYAMA NAOKI
分类号 C01B33/02 主分类号 C01B33/02
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