发明名称 |
Independently controlled, double gate nanowire memory cell with self-aligned contacts |
摘要 |
A double gate, dynamic storage device and method of fabrication are disclosed. A back (bias gate) surrounds three sides of a semiconductor body with a front gate disposed on the remaining surface. Two different gate insulators and gate materials may be used.
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申请公布号 |
US2009146208(A1) |
申请公布日期 |
2009.06.11 |
申请号 |
US20090378205 |
申请日期 |
2009.02.11 |
申请人 |
BAN IBRAHIM;CHANG PETER L D |
发明人 |
BAN IBRAHIM;CHANG PETER L.D. |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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