发明名称 |
Nonvolatile Memory Devices Including Common Source |
摘要 |
Provided is a nonvolatile memory device including a common source. The device includes a first active region crossing a second active region, a common source disposed in the second active region, and a source conductive line disposed on the common source in parallel to the common source. The source conductive line is electrically connected to the common source.
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申请公布号 |
US2009146207(A1) |
申请公布日期 |
2009.06.11 |
申请号 |
US20080328141 |
申请日期 |
2008.12.04 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM HONG-SOO;KIM KEON-SOO |
分类号 |
H01L27/115;H01L29/792 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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