发明名称 Nonvolatile Memory Devices Including Common Source
摘要 Provided is a nonvolatile memory device including a common source. The device includes a first active region crossing a second active region, a common source disposed in the second active region, and a source conductive line disposed on the common source in parallel to the common source. The source conductive line is electrically connected to the common source.
申请公布号 US2009146207(A1) 申请公布日期 2009.06.11
申请号 US20080328141 申请日期 2008.12.04
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM HONG-SOO;KIM KEON-SOO
分类号 H01L27/115;H01L29/792 主分类号 H01L27/115
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