MONOLITHICALLY INTEGRATED CRYSTALLINE DIRECT-CONVERSION SEMICONDUCTOR DETECTOR FOR DETECTING INCIDENT X-RADIATION AT ULTRA-FINE PITCH AND METHOD FOR MANUFACTURING SUCH AN X-RAY SEMICONDUCTOR DETECTOR

摘要

The present invention refers to a monolithically integrated crystalline direct- conversion semiconductor detector for detecting X-radiation incident to a detector surface exposed to an irradiation with X-rays at ultra- fine pitch, a fluoroscopic or radiographic X-ray imaging system, 3D rotational angiography device, X-ray C-arc system, fan or cone beam computed tomography imaging device which comprises a monolithically integrated crystalline direct-conversion semiconductor detector as well as to a method for manufacturing such a direct-conversion semiconductor detector. According to the present invention, said direct-conversion semiconductor detector comprises an unstructured semiconductor layer (303) which is made of a crystalline direct-conversion semiconductor material supplied with an unpatterned, non-pixilated electrically conductive layer (304) forming a cathode, wherein said semiconductor layer (303) is glued with its cathode side onto a support substrate (307) with an X-ray transparent intermediate electrically conductive layer (305) made of an anisotropic conductive adhesive film or paste lying in-between. According to the present invention, said semiconductor layer (303) is thinned to a desired thickness of e.g. 300 µm, thereby having a polished surface on an anode-faced side opposite to the side which is attached to said electrically conductive intermediate layer (305). Said surface is contacted at ultra-fine pitch with metal bumps (302a, b) of a bumped CMOS wafer (301) given by a crystalline semiconductor layer, wherein said metal bumps (302a, b) are bonded to the anode-sided surface of the semiconductor layer (303).