| 摘要 |
<p>A source conversion circuit which does not operate in a bipolar type is provided to reduce area which is used by reducing the space between the NMOS transistor and the PMOS transistor. A first supply voltage is inputted to the first supply voltage input terminal. A second supply voltage lower than a first supply voltage is inputted to a second supply voltage input terminal. An enhancement type PMOS transistor(14) is arranged between the first supply voltage input terminal and power source voltage output terminal. A depletion type NMOS transistors are arranged between the second supply voltage input terminal and power source voltage output port. A first-level shift circuit(11) converts the amplitude of the first control signal for controlling the gate of the enhancement type PMOS transistor into the first supply voltage. A first-level shift circuit(12) converts the amplitude of the second controlling signal for controlling the gate of the depletion type NMOS transistor into the first supply voltage.</p> |
