| 摘要 |
PROBLEM TO BE SOLVED: To provide a memory element that prevents deterioration in characteristics resulting from hot annealing after formation of an element. SOLUTION: A high resistance layer 3A consisting of an oxide of a metal element, and an ion source layer 3B containing metal elements (Cu, Ag, Zn) becoming an ion source are formed in this order between a lower electrode 2 and an upper electrode 4. The high resistance layer 3A includes an oxygen concentration gradient in the thickness direction, and the oxygen concentration at a part of the high resistance layer 3A touching the ion source layer 3B is below the oxygen concentration in the center of the high resistance layer 3A. Oxygen diffused from an overoxygen portion in the center of the high resistance layer 3A does not reach the ion source layer 3B during subsequent annealing, and variation in characteristics resulting from hot annealing in a subsequent step can be controlled. COPYRIGHT: (C)2009,JPO&INPIT
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