| 摘要 |
PROBLEM TO BE SOLVED: To maintain the stable operation of a transistor device with reference to nonvolatile memory such as NAND flash memory. SOLUTION: This semiconductor memory device includes: a plurality of memory cells including a semiconductor substrate 11, a gate insulating film 14a formed on the substrate, a floating gate 15a formed through the insulating film 14a, an intergate insulating film 16a formed on the floating gate, and a silicidated control gate 17a formed on the intergate insulating film; and a transistor including a semiconductor substrate 11 formed simultaneously with the memory cells, a gate insulating film 14b, a bottom gate 15b, an intergate insulating film 16b and a top gate 17b, an opening 13 that connects the bottom gate 15b and the top gate 17b to the intergate insulating film 16b, and a silicidation suppression region 27 located between the opening 13 and the gate insulating film 14b that suppresses the diffusion of metal atoms from the silicidated top gate 17b. The foregoing are the main features. COPYRIGHT: (C)2009,JPO&INPIT
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