| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device provided with an MIS transistor having a silicide film capable of suppressing disconnection of a silicide layer on a gate electrode (a Pch region, an Nch region, and a PN junction part) without worsening junction leak. SOLUTION: The semiconductor device includes a semiconductor substrate 101, a gate insulating film 103 formed on the semiconductor substrate 101, the gate electrode 104 formed on the gate insulating film 103 and having metal silicide layers 108a, 108b formed above, and active regions 106a, 106b as a source region and a drain region formed on both sides of the gate electrode 104 on the semiconductor substrate 101. The gate electrode 104 includes a P-type part 104a with a P-type impurity introduced, and a predetermined impurity element heavier than the P-type impurity is selectively introduced in the gate electrode 104 including the P-type part 104a. COPYRIGHT: (C)2009,JPO&INPIT
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