| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of avoiding characteristic fluctuation due to presence of a contact region between a device-isolation region and an active region, and to provide a method for fabricating the same. SOLUTION: The semiconductor device includes: a semiconductor layer; an element isolation film formed in the semiconductor layer; a semiconductor layer in an active region surrounded by the element isolation film; and a gap, formed on a sidewall portion of the semiconductor layer in the active region which extends in a depth direction, and at boundary between the element isolation film and the active region. The gap is not formed under the semiconductor in the active region. COPYRIGHT: (C)2009,JPO&INPIT
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