CLEAN ROOM, FILM FORMING METHOD, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a clean room reduced in the characteristic dispersion of a semiconductor device to be manufactured. SOLUTION: A vacuum chamber is set in a room filled with gas having no unfavorable effect on a semiconductor film so as to prevent an oxygen gas or a nitrogen gas of an atmospheric component from entering a vacuum chamber from the outside of the vacuum chamber. The gas having no unfavorable effect on the semiconductor film is a rare gas or hydrogen. According to such a clean room structure, an oxygen concentration, a nitrogen concentration and a moisture concentration around a manufacturing device in the room can be minimized as much as possible. COPYRIGHT: (C)2009,JPO&INPIT