LIGHT EMITTING DIODE HAVING EXTENSIONS OF ELECTRODES FOR CURRENT SPREADING

摘要

A light emitting diode is provided to maximize current spreading by arranging bottom extension parts and top extension parts into a rotation symmetry structure. A bottom semiconductor layer(13) is formed on a substrate. A top semiconductor layer is positioned on a top part of the bottom semiconductor layer in order to expose edge regions of the bottom semiconductor layer. The top semiconductor layer has an indentation part(18d). An active layer is interposed between the bottom semiconductor layer and the top semiconductor layer. A bottom electrode(21) is formed on the bottom semiconductor layer exposed of a first edge part of the substrate. A transparent electrode layer(19) is formed on the top semiconductor layer. A top electrode(31) is formed on the transparent electrode layer of a second edge part of the substrate. Bottom extension parts(25d) are extended from the bottom electrode, and are formed on edge regions of the exposed bottom semiconductor layer and regions of the bottom semiconductor layer exposed by the indentation part. Top extension parts are formed on the transparent electrode layer, and are extended from the top electrode.