发明名称 METHOD OF POLISHING SEMICONDUCTOR WAFER
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a method of polishing a semiconductor wafer, which polishes the wafer without deteriorating other polishing characteristics by reliably and efficiently reducing a content of metal penetrating into the wafer, which is to be reduced from a polishing liquid. <P>SOLUTION: In the method of polishing the semiconductor wafer, a surface of the semiconductor wafer is polished using the polishing liquid. The polishing liquid is retained in a filter, which is composed of a fiber having a metal selectively adsorbing material fixed thereon, for one to thirty minutes, and then the surface of the semiconductor wafer is polished using the processed polishing liquid in 0.5 to 24 hours. <P>COPYRIGHT: (C)2009,JPO&INPIT</p>
申请公布号 JP2009130321(A) 申请公布日期 2009.06.11
申请号 JP20070307017 申请日期 2007.11.28
申请人 MEMC JAPAN LTD 发明人 HIRAI KEIZO;MIYASHITA HIROYUKI;SANADA TOMONORI;IKEDA MASAAKI
分类号 H01L21/304;B24B37/00 主分类号 H01L21/304
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