发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PROBLEM TO BE SOLVED: To prolong a life as a product by suppressing an effect of deviation in the use environment. SOLUTION: A semiconductor memory device 10 includes a memory array 11 having a plurality of memory cells MC which become the low-resistance state/high-resistance state according to "0" data/"1" data, and an allocation of the "0" data/"1" data and the low-resistance state/high-resistance state is changed over when a power is turned on. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009129491(A) 申请公布日期 2009.06.11
申请号 JP20070302134 申请日期 2007.11.21
申请人 TOSHIBA CORP 发明人 HOSOYA KEIJI;ASAO YOSHIAKI;IWATA YOSHIHISA
分类号 G11C11/15;H01L21/8246;H01L27/10;H01L27/105;H01L29/82;H01L43/08;H01L45/00;H01L49/00 主分类号 G11C11/15
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