发明名称 |
SEMICONDUCTOR MEMORY DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To prolong a life as a product by suppressing an effect of deviation in the use environment. SOLUTION: A semiconductor memory device 10 includes a memory array 11 having a plurality of memory cells MC which become the low-resistance state/high-resistance state according to "0" data/"1" data, and an allocation of the "0" data/"1" data and the low-resistance state/high-resistance state is changed over when a power is turned on. COPYRIGHT: (C)2009,JPO&INPIT |
申请公布号 |
JP2009129491(A) |
申请公布日期 |
2009.06.11 |
申请号 |
JP20070302134 |
申请日期 |
2007.11.21 |
申请人 |
TOSHIBA CORP |
发明人 |
HOSOYA KEIJI;ASAO YOSHIAKI;IWATA YOSHIHISA |
分类号 |
G11C11/15;H01L21/8246;H01L27/10;H01L27/105;H01L29/82;H01L43/08;H01L45/00;H01L49/00 |
主分类号 |
G11C11/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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