| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor circuit capable of reducing variations of the mutual conductance of a transistor, and to provide electronic equipment. SOLUTION: The semiconductor circuit includes: first to third current sources ISA1 to ISA3 provided between a first power source VDD and first to third nodes NA1 to NA3; first to third transistors TA1 to TA3 provided between the first to third nodes and a second power source VSS; an operational amplifier OPA1 having the first node connected to its first input terminal and the second node connected to its second input terminal, and controls the first to the third current sources; a voltage source VSA11 for variation reduction provided between the first node and a fourth node NA4 connected to the drain of the first transistor so as to reduce variations in mutual conductance of the third transistor; and a current source ISA11 for variation reduction provided between the fourth node and second power source so as to r educe variance in mutual conductance. COPYRIGHT: (C)2009,JPO&INPIT
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