| 摘要 |
An undoped GaN layer, a silicon film, an n type GaN layer, an MQW active layer and a p type GaN layer are stacked sequentially in this order on an AlN buffer layer formed on a sapphire substrate. In this manner, the silicon film is formed in the mid-section of the GaN layers. The AlN buffer layer is crystal-grown at a high temperature. The construction is formed such that a reflectivity of light from a crystal-growing surface is once decreased in a crystal-growing process of the n type GaN layer formed on the silicon film, and the reflectivity of light is increased from the crystal-growing surface in a crystal-growing process of a nitride semiconductor layer to be formed on the n type GaN layer.
|
