| 摘要 |
A method of manufacturing a nitride semiconductor device includes: a working region forming step of forming a working region in a group III nitride semiconductor substrate by converging a laser beam having a wavelength of 500 nm to 700 nm in the group III nitride semiconductor substrate and by scanning a convergent point of the laser beam in a prescribed scanning direction in the interior of the group III nitride semiconductor substrate; and a dividing step of dividing the group III nitride semiconductor substrate by generating a crack from the working region without processing a surface of the group III nitride semiconductor substrate.
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