| 摘要 |
A method for reading at least one page within an erase sector of a flash memory device, the method comprising computing at least one mock reading threshold; using the at least one mock reading threshold to perform at least one mock read operation of at least a portion of at least one page within the erase sector, thereby to generate a plurality of logical values; defining a set of reading thresholds based at least partly on the plurality of logical values; and reading at least one page in the erase sector using the set of reading thresholds. |
