| 摘要 |
<p>When erasing an electric charge accumulated in a floating gate in a memory cell, a nonvolatile semiconductor memory element applies voltage between the floating gate and a drain (or a source) so as to generate a hot hole between bands in a semiconductor substrate, so that the hot hole erases the electric charge accumulated in the floating gate. Moreover, when erasing an electric charge accumulated in the floating gate, control is performed so that a threshold value between the control gate and the source of the memory cell is a desired value. Thus, the nonvolatile semiconductor memory cell can perform an erase operation without requiring a complicated control circuit.</p> |
