<p>A spin filter transistor having a semiconductor structure. A spin injector including a first spin filter tunnel barrier is positioned on the semiconductor structure. A spin detector including a second spin filter tunnel barrier is positioned on the semiconductor. Highly polarized spins injected from the spin injector are transported through the semiconductor structure, and are detected at the spin detector. The magnitude of the spin current depends on the relative magnetic alignment of the first spin filter tunnel barrier and the second spin filter tunnel barrier.</p>
申请公布号
WO2009073598(A1)
申请公布日期
2009.06.11
申请号
WO2008US85115
申请日期
2008.12.01
申请人
MASSACHUSETTS INSTITUTE OF TECHNOLOGY;SANTOS, TIFFANY, S.;MOODERA, JAGADEESH, S.