| 摘要 |
<p>A transistor includes a gate electrode, a gate insulating layer, a semiconductor layer including an amorphous oxide, source-drain electrodes, and a protective layer on a substrate. The semiconductor layer includes a first region corresponding to a region in which the source-drain electrodes are formed, and a second region not corresponding to the region in which the source-drain electrodes are formed. At least the first region includes a crystalline component having a composition different from the composition of the amorphous oxide in the second region.</p> |
