| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that prevents thermal degradation of an active layer, and to provide a highly reliable electro-optic device with that semiconductor device. SOLUTION: A semiconductor device includes an active layer 14, a source electrode 144 and a drain electrode 145 in contact with the active layer 14, a channel region 142 provided between the source electrode 144 and the drain electrode 145 in the active layer 14, a gate electrode 16 superimposed on the channel region 142 through a first insulating film 15, a temperature-sensitive portion 12 consisting of a semiconductor material and superimposed on the channel region 142 through a second insulating film 13, and a first electrode 121 and a second electrode 122 provided to sandwich a portion being superimposed on the channel region 142 at the temperature-sensitive portion 12. The first electrode 121 or the second electrode 122 conducts with the source electrode 144. COPYRIGHT: (C)2009,JPO&INPIT
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