| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit capable of measuring accurately a leak current caused by a manufacturing defect of a CMOS transistor in a cell. SOLUTION: This semiconductor integrated circuit brings an operation for the CMOS transistor of a NAND circuit 4 into an off-state by changing a logic of a node A using a state setting signal inputted into a state setting terminal ST and a NAND circuit 3a, and makes an electric power source current flow in the CMOS transistor. COPYRIGHT: (C)2009,JPO&INPIT
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