METHOD FOR CLEANING SILICON WAFER AND APPARATUS FOR CLEANING THE SILICON WAFER

摘要

After the formation of a water film on the surface of a wafer within a chamber, an oxidizing component of an oxidizing gas, an organic acid component of an organic acid mist and an HF component of an HF gas, an organic acid mist, an oxidizing component of an oxidizing gas are supplied in that order to the water film. As a result, the effect of cleaning the surface of the wafer with the HF component and the organic acid component can be attained, and the concentration of the cleaning component in the water film within the wafer surface can be rendered uniform.