摘要 |
A semiconductor memory device having a mat structure. The semiconductor memory device may comprise a first mat having a plurality of first memory cells and a second mat having a plurality of second memory cells. The first and second mats are formed in a single well region. The first and second mats may share a first well of a first conductivity type, and the first well may be formed in a second well of a second conductivity type. The second well may be formed in a semiconductor substrate of the first conductivity type. As a result, the semiconductor memory device according to embodiments of the present invention provide for higher integration density.
|