INTEGRATED CIRCUIT SYSTEM EMPLOYING DIFFUSED SOURCE/DRAIN EXTENSIONS

摘要

An integrated circuit system is provided to form an activated source/drain extension region without an ion implantation of a source/drain extension region. An NFET device(102) and a PFET device(104) are formed on a substrate. An insulation layer is formed on the NFET device, the PFET device, and the substrate. A source/drain extension region is formed between an edge of the PFET gate and the doped epitaxial layer by applying an energy source to a doped epitaxial layer(500). A mask layer is formed on the PFET device and an insulation layer. Before forming an electrical contact, the mask layer is removed on the PFET device, an NFET cap is selectively removed on the NFET gate. A fist dielectric(902) is deposited on the NFET device.