| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device that can materializing a connection structure of a low resistance and a connection structure of few twists. <P>SOLUTION: In the semiconductor device where a face having an electrode 2 of a semiconductor component 1 faces a circuit board 7, a solder layer 3 comes into contact with either one of the electrode of the semiconductor component and an electrode of the circuit board, a metal particle layer 4 made of a metal particle having a mean particle size of ≤0.1 μm comes into contact with the solder layer, a conductive filler layer 5 containing a conductive filler and a resin comes into contact with the metal particle layer, and another electrode 6 comes into contact with the conductive filler layer, thereby forming an electric connection. <P>COPYRIGHT: (C)2009,JPO&INPIT |
