| 摘要 |
<P>PROBLEM TO BE SOLVED: To form a micropattern without using a high-resolution exposure system. <P>SOLUTION: In the formation of a micropattern for forming an interconnecting line, a bridging film 6 having a size of (1/2)d is formed on both side faces of a resist film 5 having a size of 2d to form a line pattern having a size of 3d that is composed of the resist film 5 and the bridging film 6 and a space pattern having a minimum size of d. A first opening having the minimum size of d is formed on a second hard mask 4, using the resist film 5 and the bridging film 6 as a mask. The first opening is filled with a backfill material 7. On the second hard mask 4 and the backfill material 7, a bridging film 9 having the size of (1/2)d is formed on both side faces of a resist film 8 having the size of 2d that is shifted by the size 2d relative to the pattern of the resist film 5 to form a line pattern having the size of 3d that is composed of the resist film 8 and the bridging film 9 and a space pattern having the minimum size of d. A second opening having the minimum size of d is formed on the second hard mask 4, using the resist film 8 and the bridging film 9 as a mask. <P>COPYRIGHT: (C)2009,JPO&INPIT |
