| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of semiconductor devices having high pickup accuracy for semiconductor chips, regardless of the size of the semiconductor chip. SOLUTION: The manufacturing method of semiconductor devices has a process for applying a semiconductor wafer onto an adhesive layer of a dicing tape 12 where a base material layer, a rigid layer, and an adhesive layer are laminated successively; a process for forming a first groove 18 on the rigid layer and performing dicing so that a second groove 16 that is deeper than the first groove is formed on the rigid layer nearly, at right angles to the first groove; and a process for separating the semiconductor chip 10 from the adhesive layer by applying a load from a side opposite to a side, having the semiconductor wafer of the base material layer. In the manufacturing method of semiconductor devices, the depth of the first groove 18 is such that the rigid layer remains at the groove section with resect to the film thickness of the rigid layer, and the depth of the second layer 16 is such that there are no rigid layers remaining in the groove section to the film thickness of the rigid layer. COPYRIGHT: (C)2009,JPO&INPIT
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