| 摘要 |
PROBLEM TO BE SOLVED: To provide a fabrication process of a memory device having a highly reliable ferroelectric capacitor and exhibiting good characteristics. SOLUTION: A fabrication process of a memory device includes a step for forming a plurality of ferroelectric capacitors 140 in a ferroelectric memory array region 100 above a base 1, a step for forming a wiring layer 240 in a logic circuit region 200 above the base 1, a step for forming an interlayer insulating layer 30a to cover the ferroelectric capacitors 140 and the wiring layer 240, a step for forming a recess 30b by etching the interlayer insulating layer 30a formed at least in the ferroelectric memory array region 100, a step for polishing the interlayer insulating layer 30a by CMP, a step for forming contact holes 132 and 232 by etching the interlayer insulating layer 30 above the ferroelectric capacitors 140 and the wiring layer 240, and a step for forming contact portions 134 and 234 in the contact holes 132 and 232. COPYRIGHT: (C)2009,JPO&INPIT
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