发明名称 SUBSTRATE TREATING EQUIPMENT
摘要 PROBLEM TO BE SOLVED: To prevent particles from being produced owing to a weld zone between a manifold flange and a gas intake port when substrate treating equipment which carries out gas chemical reaction in a processing chamber is manufactured. SOLUTION: A cover means which is made of a material shielding the weld zone from the gas chemical reaction and having resistance to the reaction and which shields the weld zone from the gas chemical reaction is additionally provided in the substrate treating equipment to prevent production and sticking of particles onto a wafer at low cost including running cost. The cover means is constituted by combining together a plate type shield portion which shields the weld zone from the gas chemical reaction by quartz and a cylindrical insert portion inserted into a gas intake opening in the processing chamber. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009130187(A) 申请公布日期 2009.06.11
申请号 JP20070304528 申请日期 2007.11.26
申请人 FUJITSU MICROELECTRONICS LTD 发明人 TERADA TOMOO
分类号 H01L21/205;C23C16/44 主分类号 H01L21/205
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